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Product Specification www.jmnic.com Silicon Power Transistors 2SD1634 DESCRIPTION With TO-220Fa package DARLINGTON High speed switching Good linearity of hFE APPLICATIONS Power switching PINNING PIN 1 2 3 DESCRIPTION Base Collector Emitter Fig.1 simplified outline (TO-220Fa) and symbol ABSOLUTE MAXIMUM RATINGS AT Tc=25ae SYMBOL VCBO VCEO VEBO IC ICM IB PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current (DC) Collector current-Peak Base current (DC) Collector power dissipation Junction temperature Storage temperature TC=25ae CONDITIONS Open emitter Open base Open collector VALUE 100 100 7 8 12 0.5 50 150 -55~150 ae ae V A A A W UNIT V JMnic Product Specification www.jmnic.com Silicon Power Transistors CHARACTERISTICS Tj=25ae unless otherwise specified PARAMETER Collector-emitter sustaining voltage Collector-emitter saturation voltage Emitter-base saturation voltage Collector cut-off current Collector cut-off current Emitter cut-off current DC current gain CONDITIONS IC=0.2A , IB=0 IC=5A IB=5mA IC=5A IB=5mA VCB=100V IE=0 VCE=100V IB=0 VEB=7V; IC=0 IC=5A ; VCE=3V 1500 MIN 100 TYP. SYMBOL VCEO(SUS) VCEsat VBEsat ICBO ICEO IEBO hFE 2SD1634 MAX UNIT V 1.5 2.0 100 100 5 10000 |I |I V V A A mA Switching times ton ts tf Turn-on time Storage time Fall time IC=8A ;IB1=8mA IB2=-8mA; VCC=50V 3.0 5.0 3.0 |I |I |I s s s hFE Classifications Q 1500-6000 P 5000-10000 JMnic Product Specification www.jmnic.com Silicon Power Transistors PACKAGE OUTLINE 2SD1634 Fig.2 Outline dimensions (unindicated tolerance:A 0.15 mm) JMnic |
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